TI breaks ground on first Sherman fab

TI today broke ground on a 300-mm fab in Sherman, Texas. 

It is the largest private-sector economic investment in Texas history and reiterated the company’s commitment to expanding its internal manufacturing capacity for the long term.

“Today is an important milestone as we lay the groundwork for the future growth of semiconductors in electronics to support our customers’ demand for decades to come,” said chairman Rich Templeton, “since our founding more than 90 years ago, we’ve operated with a passion to create a better world by making electronics more affordable through semiconductors.”

The potential $30 billion investment includes plans for four fabs to meet demand over time, supporting as many as 3,000 direct jobs.

The new fabs will be designed to meet one of the Leadership in Energy and Environmental Design (LEED) building rating system’s highest levels of structural efficiency and sustainability: LEED Gold. Advanced 300-mm equipment and processes in Sherman will further reduce waste, water and energy consumption.

Production from the first Sherman fab is expected in 2025.

The fabs will complement TI’s existing 300-mm fabs, which include DMOS6 (Dallas), RFAB1 and the soon-to-be-completed RFAB2 (both in Richardson, Texas), which is expected to start production later this year. Additionally, LFAB (Lehi, Utah) is expected to begin production in early 2023.

“These investments in long-term manufacturing capacity further extend the company’s cost advantage and provide greater control of our supply chain,” Templeton said